首页> 外文会议>2011 IEEE International Ultrasonics Symposium >Fabrication and characterization of half-kerfed LiNbO3-based high-frequency (>100MHz) ultrasonic array transducers
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Fabrication and characterization of half-kerfed LiNbO3-based high-frequency (>100MHz) ultrasonic array transducers

机译:基于半切口的LiNbO3基高频(> 100MHz)超声阵列换能器的制备与表征

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The effect of kerf depth is investigated on the performances of array transducers. A finite element tool, COMSOL, is employed to simulate the properties of acoustic field and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. Furthermore, Inductively Coupled Plasma (ICP) deep etching process is used to etch 36°/Y-cut lithium niobate (LiNbO3) crystals and the limitation of etching aspect ratio is studied. Several arrays with different profiles are realized under optimized processes. At last, arrays with different pitches are fabricated and characterized by a network analyzer.
机译:研究了切口深度对阵列换能器性能的影响。使用有限元工具COMSOL来模拟声场的特性并计算阵列的电特性,包括串扰效应和电阻抗。此外,采用电感耦合等离子体(ICP)深度蚀刻工艺蚀刻36°/ Y切割的铌酸锂(LiNbO3)晶体,并研究了蚀刻纵横比的局限性。在优化的过程中可以实现具有不同轮廓的多个阵列。最后,通过网络分析仪制造出不同间距的阵列并对其进行表征。

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