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A 83-dB SFDR 10-MHz bandwidth continuous-time Delta-Sigma modulator employing a one-element-shifting dynamic element matching

机译:采用一元素移位动态元素匹配的83dB SFDR 10MHz带宽连续时间Delta-Sigma调制器

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This paper proposes a new dynamic element matching (DEM) method referred to as one-element-shifting (OES) for the implementation of high spurious-free dynamic range (SFDR) multi-bit Delta-Sigma modulators (DSMs). Generic DEM techniques are successful at suppressing the mismatch error and increasing the SFDR of data converters. However, they will induce additional glitch energy in most cases. Some recent DEM methods achieve improvements in minimizing glitch energy but sacrificing their effects in harmonic suppression due to mismatches. OES technique proposed in this paper can suppress the effect of glitch while preserving the reduction of element mismatch effects. Hence, this approach achieves better SFDR performance over the published DEM methods. With the proposed OES, a 3rd order, 10 MHz bandwidth continuous-time DSM is implemented in 90 nm CMOS process. The measured SFDR attains 83 dB for a 10 MHz bandwidth. The measurement result also shows that OES improves the SFDR by higher than 10 dB.
机译:本文提出了一种新的动态元素匹配(DEM)方法,称为单元素移位(OES),用于实现高无杂散动态范围(SFDR)多位Delta-Sigma调制器(DSM)。通用DEM技术成功地抑制了失配误差并增加了数据转换器的SFDR。但是,在大多数情况下,它们会引起额外的毛刺能量。一些最新的DEM方法在最小化毛刺能量的同时实现了改进,但牺牲了它们在失配引起的谐波抑制中的作用。本文提出的OES技术可以抑制毛刺的影响,同时保持元件失配效应的减小。因此,与已发布的DEM方法相比,此方法可实现更好的SFDR性能。利用提出的OES,可以在90 nm CMOS工艺中实现3阶10 MHz带宽连续时间DSM。对于10 MHz带宽,测得的SFDR达到83 dB。测量结果还表明,OES可将SFDR提高10 dB以上。

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