Air-stable technique for fabricating n-type carbon nanotube FETs

摘要

We present the electrical characteristics of air-stable n-type CNFETs, fabricated using a silicon technology compatible fabrication process. Both n-type FETs and p-type FETs have been fabricated on the same wafer. With previously-published methods for scalable removal of m-CNTs, we demonstrated the complementary CNFET inverters as well as a 2-stage inverter chain using n-type CNFETs only.