A subthreshold MOSFET bandgap reference with ultra-low power supply voltage

摘要

A novel bandgap reference (BGR) with ultra low supply voltage is presented. The proposed bandgap reference uses subthreshold MOSFETs to provide temperature compensation. Analysis and comparison between proposed bandgap and conventional current-mode bandgap are made, and it is shown that when working with low supply voltage, the proposed bandgap is less sensitive to mismatch and power supply noise. The bandgap reference is implemented in SMIC 0.13µm RF technology, and simulation results show that it can provide the output voltage of 429 mV with a supply voltage as low as 0.6 V.