Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor

机译：6mm非中心对称半导体中二次谐波产生的器件级仿真

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

This paper presents a numerical solution for the second harmonic generation (SHG) inside a 6-mm n-type noncentrosymmetric semiconductor subjected to highly intense transverse magnetic (TM) laser wave in a semiconductor grounded slab taking the field-carrier interaction into account.

机译：本文考虑了场-载流子相互作用，提出了在6mm n型非中心对称半导体内部经受半导体接地板中的高强度横向磁（TM）激光波的二次谐波产生（SHG）的数值解。

著录项

来源
《2011 High Capacity Optical Networks and Enabling Technologies》|2011年|p.169-173|共5页
会议地点 Riyadh(SA)
作者
Eldessouki Mohamed S.; Elsayed Amira A.; Elbadawy Elsayed A.;
展开▼
作者单位

King Saud University, General Administration for Studies and Designs Vice-Presidency for Projects, Saudi Arabia;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类接入网;
关键词
Nonlinear optics; noncentrosymmetric 6-mm semiconductor; screening effect; second harmonic generation; second order nonlinear susceptibility;

机译：非线性光学;非中心对称6mm半导体;屏蔽效应;二次谐波产生;二阶非线性磁化率;

相似文献

外文文献
中文文献
专利

1. Large-signal simulation of semiconductor lasers on device level: numerical aspects of the harmonic balance method [J] . Bernhard Schmithuesen, Stefan Odermatt, Bernd Witzigmann Optical and quantum electronics . 2008,第5a6期

机译：器件级半导体激光器的大信号仿真：谐波平衡法的数值方面
2. Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations [J] . Orazio Muscato, Vincenza Di Stefano Compel . 2011,第2期

机译：通过蒙特卡洛和流体动力学模拟在纳米级半导体器件中产生和传输热量
3. Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures [J] . D. Persano Adorno, M. Zarcone, G. Ferrante, Physica Status Solidi. C, Conferences and critical reviews . 2003,第6期

机译：体半导体和亚微米结构中高次谐波产生的蒙特卡罗模拟
4. Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor [C] . Eldessouki Mohamed S., Elsayed Amira A., Elbadawy Elsayed A. High-Capacity Optical Networks and Enabling Technologies . 2011

机译：6毫米非中心体微半导体中二次谐波产生的装置级模拟
5. Low-frequency bulk and surface generation-recombination noise simulations of semiconductor devices. [D] . Hou, Fan-Chi (Frank). 2002

机译：半导体器件的低频体和表面产生-复合噪声仿真。
6. A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation [O] . K. Rupp, C. Jungemann, S.-M. Hong, -1

机译：球形谐波扩展方法在半导体器件仿真中的最新进展综述
7. Simulation of Semiconductor Devices Using a Galerkin/Spherical Harmonic Expansion Approach to Solving the Coupled Poisson-Boltzmann System [O] . Poisson-boltzmann System, Khalid Rahmat, Jacob White, 1996

机译：使用Galerkin /球谐扩张方法求解耦合Poisson-Boltzmann系统的半导体器件仿真
8. The Coefficients of Second Harmonic Generation of Light (SHG) of Noncentrosymmetric Crystals [R] . Bechmann, R., Ballato, A. 1972

机译：非中心对称晶体的二次谐波产生系数（sHG）

Device level simulation of second harmonic generation in 6-mm noncentrosymmetric semiconductor

摘要

著录项

相似文献

相关主题

期刊订阅