Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair

摘要

Two insulated-gate bipolar-transistors (IGBTs) inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested in an inductive switching circuit and curve tracer at a range of temperatures. Static and dynamic characteristics of both IGBTs and diodes have been used in loss comparisons between the two power modules. The results demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching and conduction losses.