Improvement of 1/f noise in advanced 0.13 µm BiCMOS SiGe:C Heterojunction Bipolar Transistors

摘要

In this study, we present recent low frequency noise results obtained on Si/SiGe:C Heterojunction Bipolar Transistors (HBTs) associated with a 0.13 µm BiCMOS technology. The HBTs are supplied by STMicroelectronics Crolles and present unity current gain frequencies (fT) and maximum oscillation frequencies (fmax) in the 250s of GHz.