Hybrid 2D-3D plasmonic noise in a gated semiconductor slab

摘要

We present a joint analytical and numerical study of plasmonic noise in gated semiconductor slabs of arbitrary thickness. Through the analysis of the high-frequency spectral density of voltage fluctuations we show that the positions of the frequency resonances depend on the topology of the slabs. A transition from a 2D to a 3D behavior is revealed when the channel length decreases or when the order of the modes grows. In particular, the resonance frequencies converge towards the value of the 3D plasma frequency which represents the maximum possible value for resonance frequencies.