Field-effect transistors with graphene channels and quantum dots: Gate control and photo-induced effects

摘要

Field effect transistors with channels made of graphene layer(s) are explored. The graphene layer(s) are brought into contact with semiconductor quantum dots and the effects of pump light on its electrical characteristics are assessed. Negative differential resistance (NDR) is observed as a function of gate voltage and as a function of pump light illumination. The dots' photoluminescence (PL) has increased abruptly to twice its value as a function of source-drain voltage.