Temperature-related voltage generating circuit using MOS in strong inversion

摘要

System-on-Chip (SoC) integrated circuits frequently embed voltage references and temperature sensors. In view of the spread of battery-supplied products, there is a growing demand for low-power and low-voltage circuit solutions to implement these blocks. This paper describes the development of one such circuit structure that employs an alternative technique to generate reference and PTAT voltage signals based on a suitable arrangement of MOS transistors operating in strong inversion. Low-voltage prototypes were produced on the conventional process CMOS AMS 0.35um to provide the experimental results presented in this work. These results include the generation of a voltage reference signal with thermal coefficient lower than 10ppm/°C, from -40°C to 120°C, under a 1V power supply.