High efficiency nonuniform grating coupler by utilizing the lag effect in the dry etching process

机译：利用干法刻蚀中的滞后效应的高效非均匀光栅耦合器

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Utilizing the lag effect in dry etching, a nonuniform silicon-on-insulator grating coupler is designed and fabricated. Over 80% (>-1 dB) coupling efficiency is theoretically obtained and experimental coupling efficiency of 55% is achieved for TE polarization.

机译：利用干法刻蚀中的滞后效应，设计和制造了一种不均匀的绝缘体上硅栅耦合器。理论上可获得超过80％（> -1 dB）的耦合效率，而TE极化的实验耦合效率达到55％。

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来源
《2010 Conference on Optical Fiber Communication, collocated National Fiber Optic Engineers Conference (OFC/NFOEC)》|2010年|p.1-3|共3页
会议地点 San Diego CA(US)
作者
Yongbo Tang; Zhechao Wang; Westergren U.; Wosinski L.;
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Dept. of Microelectron. Appl. Phys., R. Inst. of Technol. (Sweden), Kista, Sweden;

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原文格式 PDF
正文语种 eng
中图分类光波通信、激光通信;
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1. A High-Efficiency Nonuniform Grating Coupler Realized With 248-nm Optical Lithography [J] . He, L., Liu, IEEE Photonics Technology Letters . 2013,第14期

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2. Surface Grating Fabrication by Inductively Coupled Plasma Dry Etching for InP-Based Photonic Integrated Circuits [J] . Juan Zhang, Changzheng Sun, Bing Xiong, Physica status solidi . 2018,第18期

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3. Low-Dimensional Waveguide Grating Fabrication in GaN with Use of SiCl_(4)/Cl_(2)/Ar-Based Inductively Coupled Plasma Dry Etching [J] . R. DYLEWICZ, S. PATELA, R.A. HOGG, Journal of Electronic Materials . 2009,第5期

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4. High efficiency nonuniform grating coupler by utilizing the lag effect in the dry etching process [C] . Tang, Yongbo, Wang, Zhechao, Westergren, Urban, Conference on Optical Fiber Communication, collocated National Fiber Optic Engineers Conference;OFC/NFOEC . 2010

机译：利用干法刻蚀中的滞后效应的高效非均匀光栅耦合器
5. Studies of the effects of fluorocarbon deposition and etching on silicon and silicon dioxide etching processes using methyl trifluoride in an inductively coupled plasma reactor, and the development of a reactive ion beam system for the study of plasma-surface interaction mechanisms. [D] . Rueger, Neal R. 1998

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High efficiency nonuniform grating coupler by utilizing the lag effect in the dry etching process

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