16kb Phase Change Memory Test Chip with 0.18-μm Process

机译：采用0.18μm工艺的16kb相变存储器测试芯片

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摘要

A 16kb phase change memory with standard CMOS 0.18-μm test chip has been demonstrated. The critical integration technology of the phase change material fabrication and the standard CMOS process has been improved. Full integration of PCRAM, including memory cell, array structure, critical circuit module, and physical layout, has been designed and verified. Test results about PCM cell and circuit module has been generated.

机译：已经展示了带有标准CMOS0.18-μm测试芯片的16kb相变存储器。相变材料制造和标准CMOS工艺的关键集成技术已得到改进。已经设计并验证了PCRAM的完全集成，包括存储单元，阵列结构，关键电路模块和物理布局。已生成有关PCM单元和电路模块的测试结果。

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来源
《2009 International conference on semiconductor technology for ultra large scale integrated circuits and thin film transistors (ULSIC vs. TFT)》|2009年|p.133-144|共12页
会议地点 Xian(CN);Xian(CN)
作者
S. Ding; Z. T. Song; B. Liu; D. L. Cai; X. G. Chen; Y. F. Chen; M. Zhong; G. M.Feng; C. Xu; S. L. Feng; Z. F. Xie; Z. Y. Yang; X. D. Wan; F. X. Zhang; G. P. Wu; Y. H. Xiang;
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作者单位

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences;

Semiconductor Manufacturing International Corporation;

Semiconductor Manufacturing International Corporation;

Semiconductor Manufacturing International Corporation;

Semiconductor Manufacturing International Corporation;

Semiconductor Manufacturing International Corporation;

Semiconductor Manufacturing International Corporation;

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原文格式 PDF
正文语种 eng
中图分类大规模集成电路、超大规模集成电路;
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专利

1. A 0.18-μm 3.3 V 16 k Bits 1RIT Phase Change Random Access Memory （PCRAM） Chip [J] . 丁晟, 宋志棠, 刘波, 中国物理快报：英文版 . 2008,第010期

机译：0.18μm3.3 V 16 k位1RIT相变随机存取存储器（PCRAM）芯片
2. A 0.18-μm 3.3 V 16 k Bits 1RIT Phase Change Random Access Memory (PCRAM) Chip [J] . DING Sheng, SONG Zhi-Tang, LIU Bo, 中国物理快报：英文版 . 2008,第010期

机译：0.18μm3.3 V 16 k位1RIT相变随机存取存储器（PCRAM）芯片
3. Transient phase change effect during the crystallization process in phase change memory devices [J] . E. G. Yeo, R. Zhao, L. P. Shi, Applied Physicsletters . 2009,第24期

机译：相变存储器件中结晶过程中的瞬态相变效应
4. 16kb Phase Change Memory Test Chip with 0.18-μm Process [C] . S. Ding, Z. T. Song, B. Liu, International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors . 2009

机译：16KB相变存储器测试芯片，工艺0.18-μm
5. Energy-aware optimization for embedded systems with chip multiprocessor and phase-change memory. [D] . Li, Jiayin. 2012

机译：具有芯片多处理器和相变存储器的嵌入式系统的能源感知优化。
6. Phase-Specific Brain Change of Spatial Working Memory Processing in Genetic and Ultra-High Risk Groups of Schizophrenia [O] . Jung-Seok Choi, Ji-Young Park, Myung Hun Jung, 2012

机译：精神分裂症的遗传和超高危人群中空间工作记忆处理的特定阶段大脑变化
7. Integration of IC Industry Feature Sizes with University Back-End-of-Line Post Processing: Example Using a Phase-Change Memory Test Chip [O] . Jennifer Regner, Mahesh Balasubramanian, Beth Cook, 2015

机译：IC行业特征尺寸与大学后端后处理的集成：使用相变存储器测试芯片的示例

16kb Phase Change Memory Test Chip with 0.18-μm Process

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