Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, 4418580, Japan;
rnDepartment of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, 4418580, Japan;
rnDepartment of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, 4418580, Japan;
rnDepartment of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, 4418580, Japan;
rnDepartment of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, 4418580, Japan;
rnNorthwest Institute for Nonferrous Metal Research, P.O.Box 51, Xi'an, 710016, Ch;
机译:形成亚微米级氧化物阻挡层,以减少多丝Bi2223胶带中的交流损耗
机译:引入氧化阻挡层降低Bi2223胶带交流损耗的研究
机译:具有新型丝间电阻性碳酸盐屏障的多丝低AC损耗Bi(2223)胶带中的AC损耗
机译:BI2223中的AC损耗特性通过引入氧化屏障而具有增强的横向电阻率的多丝带
机译:(铋,铅)SCCO和钇钡氧化铜超导带的交流损耗特性
机译:MRI和低AC损耗应用的多丝MgB2链的结构和传输特性
机译:形成亚微米级氧化物阻挡层,以减少多丝Bi2223胶带中的交流损耗