首页> 外文会议>2006 International carbon conference (extended abstracts) >Effects of SiC Coating and Heat Treatment on DampingBehavior of 2D and 3D C/SiC Composites
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Effects of SiC Coating and Heat Treatment on DampingBehavior of 2D and 3D C/SiC Composites

机译:SiC涂层和热处理对2D和3D C / SiC复合材料阻尼行为的影响

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Three groups of 2D and 3D C/SiC composites were fabricated by chemical vaporhree infiltration (CVI) process process: the first group was as received received, and the second , group was treated at CDCNF1629500 °Cin vacuu vacuum atmosphere for 2h, and the third m group was deposited with a chemical chemical-vapor vapor-deposited(CVD CVD) SiC coating. Internal friction of these composites were measured by dynamical mechanicalanalysis(DMA) at different frequencies, I.e. CDCNF1629Hz, 2Hz, 5Hz, CDCNF16290Hz and 20Hz, from room temperatureto 400 °C in a air ir atmosphere. The results show that SiC coating and heat treatment decrease internalfriction of C/SiC composites and the damping peak disappears or decreases in the testing temperaturerange. The effect of CVD SiC coat he coating on damping behavior of 2D and 3D C/SiC composites is mainlying related to the change of porosity and is independent of fiber preform architecture architecture. However, the effectowever, of heat treatment on damping behavior of 2D and 3D C/SiC composites is mainly attributed to thechange in the SiC matrix and interphase bonding bonding, and it is dependent on fiber preform architecture architecture.Both of oth CVD SiC coating and heat treatment studied in this paper have no ave influence on relationshipbetween d damping amping behavior of C/SiC composites and frequency.
机译:通过化学气相法制备了三组2D和3D C / SiC复合材料 三渗透(CVI)过程:第一组是收到的,第二组在CDCNF1629 \ 500°C下处理 在真空真空环境中放置2h,然后在第三m组中沉积化学-化学蒸汽 (CVD CVD)SiC涂层。这些复合材料的内部摩擦力是通过动态力学来测量的 在不同频率下进行分析(DMA),即CDCNF1629 \ Hz,2Hz,5Hz,CDCNF1629 \ 0Hz和20Hz,从室温开始 空气中至400°C。结果表明,SiC涂层和热处理减少了内部 C / SiC复合材料的摩擦和阻尼峰在测试温度下消失或降低 范围。 CVD SiC涂层对2D和3D C / SiC复合材料的阻尼行为的影响主要是 与孔隙率的变化有关,并且与纤维预制棒的体系结构无关。但是效果 然而,热处理对2D和3D C / SiC复合材料的阻尼行为的影响主要归因于 SiC基体和相间键合键合的变化,这取决于光纤预制棒的体系结构。 本文研究的CVD SiC涂层和热处理均对两者之间的关系没有影响 C / SiC复合材料的d阻尼电流行为与频率之间的关系。

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