首页> 外文会议>2006 7th International Conference on Electronics Packaging Technology(ICEPT 2006) >Metallurgical behavior of Au/Al bond interface during high temperature storage of ultrasonic wedge bonding
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Metallurgical behavior of Au/Al bond interface during high temperature storage of ultrasonic wedge bonding

机译:超声楔形结合高温存储过程中Au / Al结合界面的冶金行为

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摘要

Ultrasonic wedge bonding, which can be done at room temperature, is widely used in microelectronic package. It is primarily used to bond either Al wire or Au wire. After bonding and aging, the joint cross-section of 25μm Au wire bonded on Al metallization pad was analyzed by SEM with EDX. It is found that, there was evident diffusion of Au and Al, and AU_5Al_2 intermetallic compound (IMC) formed first after aging for 10 days at 200℃ in atmosphere, and there was also some Au_2Al formed at the edge of the interface. After aging for 20 days, the IMC developed slightly, and also Kirkendall voids generated at the interface. After aging for 30 days, the IMC began to transform to other Au-Al IMCs, and it became Au_2Al IMC finally after aging for 40 days.
机译:可以在室温下完成的超声波楔形键合被广泛用于微电子封装中。它主要用于粘合铝线或金线。粘接和时效后,用EDX通过SEM分析接合在Al金属化焊盘上的25μm金丝的接合截面。结果表明,Au和Al明显扩散,在大气中200℃下老化10天后,首先形成了AU_5Al_2金属间化合物,在界面边缘还形成了一些Au_2Al。老化20天后,IMC略有发展,并且在界面处也产生了Kirkendall空隙。老化30天后,IMC开始转变为其他Au-Al IMC,老化40天后最终成为Au_2Al IMC。

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