Integrated FDTD Analysis of Microwave Solid-State Circuit

摘要

Traditional extended FDTD method incorporated the lumped-models or stable models of active devices may no longer gives high precision in the analysis of microwave active circuits when the operating frequencies become higher. An integrated FDTD method combined the Drift-diffuse transient models of semiconductor devices is presented in this paper. To demonstrate its efficiency and validity, this method is applied to analyze a microwave transistor circuit. It is shown that this method gives better precision than the traditional extended methods with the lumped-models and stable models.