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MEASUREMENT OF STRESS AND DELAMINATION IN FLIP CHIP ON LAMINATE ASSEMBLIES

机译:层压组件上倒装芯片中应力和分层的测量

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摘要

Mechanical stress distributions in packaged silicon die that have resulted during assembly or environmental testing can be accurately characterized using test chips incorporating integral piezoresistive sensors. In this paper, an overview of recent measurements made in flip chip on laminate assemblies with (111) silicon test chips is presented. Transient die stress measurements have been made during underfill cure, and the room temperature die stresses in final cured assemblies have been compared for several different underfill encapsulants. The experimental stress measurements in the flip chip samples were then correlated with finite element predictions for the tested configurations. In addition, stress variations have been monitored in the assembled flip chip die as the test boards were subjected to slow temperature changes from -40 to +150℃. Finally the stress variations occurring during thermal cycling from -40 to +125 ℃ have been characterized. These measurements have been correlated with the delaminations occurring at the die passivation to underfill interface measured using C-mode Scanning Acoustic Microscopy (C-SAM). Using the measurements and numerical simulations, valuable insight has been gained on the effects of assembly variables and underfill material properties on the reliability of flip chip packages.
机译:使用集成了压阻传感器的测试芯片,可以准确地表征在组装或环境测试过程中在封装的硅芯片中产生的机械应力分布。在本文中,将概述使用(111)硅测试芯片在层压组件上倒装芯片中进行的最新测量。已在底部填充胶固化过程中进行了瞬态芯片应力测量,并已针对几种不同的底部填充胶对最终固化组件中的室温芯片应力进行了比较。然后将倒装芯片样品中的实验应力测量结果与测试配置的有限元预测相关联。此外,当测试板经受从-40到+ 150℃的缓慢温度变化时,已监测了组装的倒装芯片管芯中的应力变化。最后,对在-40至+125℃的热循环过程中发生的应力变化进行了表征。这些测量结果与使用C模式扫描声学显微镜(C-SAM)测量的钝化至底部填充界面的脱模现象相关。使用测量和数值模拟,已经获得了关于装配变量和底部填充材料特性对倒装芯片封装可靠性的宝贵见解。

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