A Distributed Small-signal HBT Model for Millimeter-wave Applications

摘要

A novel distributed small-signal HBT model at millimeter-wave frequencies is proposed. This new approach is based on an electromagnetic simulation on the extrinsic passive part of a HBT transistor. The S-parameters of the HBT intrinsic active part are computed by using the "multi-port connection method" Then, values of all the HBT intrinsic model elements can be obtained by using explicit analytical expressions. Good agreement between the measured and the simulated result has been demonstrated.