Enhancement of Quality Factor in RF-MEMS Spiral Inductors by Etching out Substrate

摘要

It's well known that substrate coupling degrades Q of spiral inductors. By etching out partial or whole substrate underneath the inductors, Q of spiral inductors is improved. This paper extends PEEC method for fast-accuracy electromagnetic analysis of such substrate coupling in RF-MEMS spiral inductors. By introducing electrical boundary conditions into PEEC, the capacitance matrix is extended to include substrate coupling. With equivalent of charges in interface, Green functions in uniform dielectric regions can be used in calculation. The numeric results show good agreement with published measurement data.