首页> 外文会议>2001 International Microprocesses and Nanotechnology Conference, Oct 31-Nov 2, 2001, Shimane, Japan >Holographic Grating Formation by Wet etching in Amorphous As_(40)Ge_(10)Se_(15)S_(30) Thin Film
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Holographic Grating Formation by Wet etching in Amorphous As_(40)Ge_(10)Se_(15)S_(30) Thin Film

机译:非晶As_(40)Ge_(10)Se_(15)S_(30)薄膜中湿法刻蚀形成全息光栅。

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摘要

0.26N NaOH solution used in these experiments are suitable for the fabrication of relief grating in As_(40)Ge_(10)Se_(15)S_(35) layers with 1 .8μm and a diffraction efficiency of 5.05%, first order of diffraction. Better results will be obtained by optimizing the etching condition.(concentration, etching time, temp, etc). On the basis of the above-presented results we conclude that As_(40)GE_(10)Se_(15)S_(35) layers can be used for industrial fabrication of the diffractive optical elements and thus as recording media for holography as well.
机译:这些实验中使用的0.26N NaOH溶液适用于在As_(40)Ge_(10)Se_(15)S_(35)层中以1.8μm和5.05%的衍射效率(一级衍射)制造浮雕光栅。 。通过优化蚀刻条件(浓度,蚀刻时间,温度等)可以获得更好的结果。基于上述结果,我们得出结论,As_(40)GE_(10)Se_(15)S_(35)层可以用于衍射光学元件的工业制造,因此也可以用作全息照相的记录介质。

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