Impact of Gallium Nitride Semiconductor Devices in Tri-state Boost Converter

摘要

Gallium Nitride (GaN) semiconductor power devices are one of the developing innovations that have shown a tremendous advantage over silicon and silicon carbide devices. GaN devices empower the power converter in terms of various performance parameters like efficiency, fast response, and compactness in sizing. In this work, the modeling of Tri-state boost converter (TSBC) using three sets of semiconductor devices i.e. (i) Si-Diode and Si-MOSFET, (ii) SiC-Diode and SiC-MOSFET, and (iii) GaN-Diode and GaN-MOSFET have performed. Thereafter, the losses of each versions of TSBC are analyzed and presented through loss matrix. Further, comparative results are plotted which show that the GaN based TSBC consumes very low losses among all three versions of TSBC for high frequency applications, which confirms the greatness of GaN semiconductor devices.