Preparation and Ferroelectric Properties of CaBi_2Ta_2O_9/BaBi_2Ta_2O_9 Thin Films on Pt-passivated Silicon

摘要

CaBi_2Ta_2O_9 (CBT) thin films were successfully crystallized on Pt-passivated Si substrates by inserting BaBi_2Ta_2O_9 (BBT) thin buffer layer via the triple alkoxide solution method. The BBT thin buffer layer, which was prepared on Pt-passivated Si, was essential for suppression of the non-polar c-axis orientation of CBT thin film. The resultant 650℃-crystallized CBT/BBT thin film on Pt-passivated Si was a single phase of layer-structured perovskite and showed random orientation. The CBT/BBT thin film exhibited P-E hysteresis loops. The remanent polarization (P_r) and coercive electric filed (E_c) were 5.8 μC/cm~2 and 117 kV/cm, respectively, at 11 V. The dielectric constant (ε) and loss factor (tanδ) were 150 and 0.026, respectively, at 100 kHz.