850-NM VERTICAL-CAVITY SURFACE-EMITTING LASERS ON SI SUBSTRATES

摘要

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxidedelined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53 percent and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.