Invited TCAD/DA Methodology for MPU and ASIC with Updated Processes and Devices

摘要

TCAD and DA are the two key computational design tools in VLSI development. Historically, TCAD was used in process and device performance analysis, however, new application for conncurrent process and chip development has been hilighted todate. In this paper, we propose a TCAD/DA methodology for MPU and ASIC design. It allows a predictive chip-design with quick quantitative correlation studies between process-recipe and CKT & delay required in chip performance diagnosis. Effects of statistical process variation on 0.35um CMOS have been rigorously characterized with a new global TCAD calibration technique. Based on the data, process variation effects on a 0.25um CMOS have been predicted, which is concluded that the Vth and ldsat total-variation of the 0.25um CMOS shows less than10