首页> 外文会议>1996 Symposium on Smart Materials, Structures, and MEMS >CAD of 0.1- to 10-GHz GaAs MMIC SPST switch
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CAD of 0.1- to 10-GHz GaAs MMIC SPST switch

机译:0.1至10 GHz GaAs MMIC SPST开关的CAD

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Abstract: The design of the SPST switch provides an insertion loss less than 2 dB, isolation more than 40 dB and return loss better than 17.5 dB in the frequency range of 0.1 GHz to 10 GHz. The insertion loss is improved by treating SPST switch as a 50 approximately ega artificial transmission line with incorporation of inductor in series arm and the capacitance of MESFET in the shunt arm. High isolation is ensured by the lower value of `ON' resistance of MESFET in shunt arm. Also good return loss is achieved by paralleling a 50 approximately ega resistor with capacitance of MESFET in series arm. The absence of DC blocking capacitors and replacement of large value bias chokes with 5 K approximately ega resistors effectively improved the performance of SPST switch at low frequency and also reduced the chip size. The overall chip dimension is 2.2 mm $MUL 1.7 mm.!2
机译:摘要:SPST开关的设计在0.1 GHz至10 GHz的频率范围内提供小于2 dB的插入损耗,大于40 dB的隔离度和大于17.5 dB的回波损耗。通过将SPST开关视为50 ega的人造传输线,并在串联臂中加入电感器和在并联臂中结合MESFET的电容,可以改善插入损耗。并联臂中MESFET的“ ON”电阻值较低,可确保较高的隔离度。通过在串联臂中并联一个50 ega的电阻与MESFET的电容,也可以实现良好的回波损耗。缺少隔直电容器,并用5 K大约ega的电阻替代大值偏置扼流圈,可以有效地改善SPST开关在低频时的性能,并减小芯片尺寸。整体芯片尺寸为2.2毫米$ MUL 1.7毫米!2

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