High Temperature Microwave Modelling and Circuit Design with MESFET's and HBT's

摘要

Novel microwave circuit structures have been designed and fabricated for application at high operating temperatures. The required simulation and characterization of MESFET and HBT devices at high ambient temperatures have been carried out. Novel physical analytical models for the high temperature performance of MESFET's and HBT's were developed. As an example a fully integrated radar front-end operating at temperatures up to 200℃ is given in the paper.