Using n-Channel TFTs without LDD Structures for High Stabilities of 1.2-V High-Density SRAMs

摘要

In conclusion, we have demonstrated that 1.2-V SRAM cells with high stabilities can be designed with n-channel TFTs and p-MOSFETs. The n-TFTs are also easier to fabricate and have superior characteristics than p-TFTs.