首页> 外文会议>1995 IEEE Hong Kong electron devices meeting >Dynamic Response of Buried Heterostructure and Stripe Geometry λ/4 DFB Semiconductor Lasers
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Dynamic Response of Buried Heterostructure and Stripe Geometry λ/4 DFB Semiconductor Lasers

机译:埋入异质结构和条纹几何λ/ 4 DFB半导体激光器的动态响应

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摘要

A comparison between different lateral confinement structures in DFB laser is analyzed with identical material parameters and structure in transverse and longitudinal directions. Results show that stripe geometry DFB lasers offer better dynamic response than buried heterostructure DFB lasers.
机译:分析了具有相同材料参数和横向和纵向结构的DFB激光器中不同横向限制结构之间的比较。结果表明,条形几何DFB激光器比埋入异质结构DFB激光器具有更好的动态响应。

著录项

  • 来源
  • 会议地点 Hong Kong(CN)
  • 作者

    Y.L. Ling; S.F. Yu; E.H. Li;

  • 作者单位

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 电子元件、组件;
  • 关键词

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