Abstract: Interatomic force constant ($alpha@) of the A-C and B-C bonds in A$+II$/B$+IV$/C$-2$/$+V$/ and A$+I$/B$+III$/C$- 2$/$+VI$/ groups of optoelectronic materials has been calculated using plasma oscillations theory of solids. A new relation between force constant and plasmon energy has been obtained. The effect of delocalization of noble metal d- electrons has been taken into account while calculating the force constant of the A-C bond in A$+I$/B$+III$/C$-2$/$+VI$/ semiconductors. On the basis of the best-fit data, another simple equation has been proposed for the calculation of the force constant from their plasmon energy. The calculated values of force constant from these equations have been compared with the values reported by different workers. An excellent agreement has been obtained between them.!5
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机译：摘要：A $ + II $ / B $ + IV $ / C $ -2 $ / $ + V $ /和A $ + I $ / B $ +中的AC和BC键的原子间力常数（$ alpha @） III $ / C $-2 $ / $ + VI $ /组光电子材料已使用固体的等离子体振荡理论进行了计算。已经获得了力常数与等离子体激元能量之间的新关系。在计算A $ + I $ / B $ + III $ / C $ -2 $ / $ + VI $ /半导体中A-C键的力常数时，已考虑到贵金属d电子离域的影响。根据最佳拟合数据，提出了另一个简单方程式，用于根据其等离激元能量计算力常数。根据这些方程式计算出的力常数值已与不同工人报告的值进行了比较。他们之间已经达成了极好的协议。！5
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