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Novel current limit circuitry for LDOs

机译:适用于LDO的新型限流电路

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摘要

This paper presents a novel circuit implementation for overcurrent protection of low-dropout voltage regulators, that is able to limit the maximum current the regulator can source into the load to a value set by the user and to keep the current limit value fairly independent of process variation and output voltage, as well as maintaining its temperature drift over the wide temperature range of −50°C to +185°C to below 15%. This is achieved by using an open loop Widlar bandgap structure supplied by an additional current branch, placed in parallel with the power transistor. Design equations are presented in the paper along with electro-thermal simulations that identify the hot spots of the power transistor, thus optimizing the placement of the sense transistor and improving the current sensing accuracy. The proposed circuit is implemented in a standard bipolar junction transistor process. Measurement results — including thermal test scenarios are in good correlation with simulations, thus validating the design.
机译:本文提出了一种用于低压差稳压器的过流保护的新颖电路实现,该电路能够将稳压器可提供给负载的最大电流限制为用户设置的值,并使电流极限值与过程完全无关变化和输出电压,并在-50°C至+ 185°C的宽温度范围内保持15%以下的温度漂移。这是通过使用由附加电流分支提供的开环维德拉带隙结构来实现的,该分支与功率晶体管并联放置。本文提供了设计方程式以及电热仿真,这些电热仿真可识别功率晶体管的热点,从而优化了感测晶体管的位置并提高了电流感测精度。所提出的电路以标准的双极结型晶体管工艺实现。测量结果(包括热测试场景)与仿真具有很好的相关性,从而验证了设计。

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