Challenges and Opportunities for EPL and EUVL Masks

摘要

As the semiconductor industry is continuing to stay on the path laid by Moore's, law, challenges in the technology development are on the rise. For the transition from optical lithography to next generation lithography for sub l00nm nodes, masks are considered to be high risk. Mask issues are not only critical to the NGL technologies-such as Extreme Ultra Violet lithography (EUVL), E-beam Projection Lithography (EPL), Ion projection lithography (IPL) and X-ray lithography (XRL)-but also to the extension of optical lithography using 193 and 157 nm wavelengths. The paper addresses the details and progress made on fabrication of EPL and EUVL masks in recent years, highlighting the challenges such as manufacturability, defect control, inspection and repair.