首页> 外文会议>The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议) >Defect modes around low-lying phonon in Ag β-Alumina by Raman scattering with high resolution
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Defect modes around low-lying phonon in Ag β-Alumina by Raman scattering with high resolution

机译:高分辨率拉曼散射在Agβ-氧化铝中低能声子周围的缺陷模式

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Raman spectra for low-lying phonons of Ag β-alumina were measured in the temperature range of 30 K-280 K. The broad band of the low-lying phonon was found to contain three Lorentz bands by a double monochrometer with high resolution (ΔE=1 cm-1). Well resolved three bands correspond to the previous Raman results observed from the isomorphous β-alumina of K, Tl or Rb. The decomposed low-lying phonon of Ag β-alumina shows that the band width broadens with an increase in temperature clearly. The damping energy obtained from the Raman line-width of the low-lying phonon was estimated to be 0.51 meV at 30 K. It is in excellent agreement with the value 0.55 meV at 30 K from the femtosecond time-resolved observation.
机译:在30 K-280 K的温度范围内测量了Agβ-氧化铝低能级声子的拉曼光谱。发现低能级声子的宽带通过高分辨率的双单色仪(ΔE)包含三个Lorentz谱带。 = 1 cm-1)。良好分辨的三个谱带对应于先前从K,Tl或Rb的同构β-氧化铝观察到的拉曼结果。 Agβ-氧化铝分解后的低价声子表明,随着温度的升高,带宽逐渐变宽。根据飞秒时间分辨观测,从低洼声子的拉曼线宽获得的阻尼能量在30 K时估计为0.51 meV。与30 K在0.5 K meV时的值非常一致。

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