首页> 外文会议>16th European Passive Components Conference Oct 14-17, 2002 Port St. Laurent, France >DC BIAS VOLTAGE DEPENDENCE OF THE CAPACITANCE OF ANODISED NIOBIUM
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DC BIAS VOLTAGE DEPENDENCE OF THE CAPACITANCE OF ANODISED NIOBIUM

机译:阳极铌电容的直流偏置电压依赖性

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The capacitance dependence on bias voltage of the oxidised Nb anode bodies was studied after each technological step: the first preforming, the heat treatment, the second preforming, the MnO_2 coverage and on the finished capacitors. The bias voltage dependence occurs by diminution of the polarisation charge caused by neutral oxygen vacancies (V_o~x) which ionise under the effect of the electric field. The bias dependence for anodes in wettest experiments is significant after the preforming, but it becomes negligible after the MnO_2 coverage. This can be explained by the several improving preforming and annealing steps during the MnO_2 coverage, when further healing of the oxide layer takes place.
机译:在每个工艺步骤之后,研究了电容对氧化Nb阳极体偏置电压的依赖性:第一个预成型,热处理,第二个预成型,MnO_2覆盖率以及最终电容器。由于中性氧空位(V_o〜x)在电场的作用下电离而引起的极化电荷的减少,从而产生了偏置电压依赖性。在最湿的实验中,阳极对偏压的依赖性在预成型后很明显,但在MnO_2覆盖后,其依赖性可以忽略不计。当发生氧化层的进一步修复时,可以通过在MnO_2覆盖过程中改进的几个预成型和退火步骤来解释这一点。

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