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A CONVENIENT METHOD FOR X-RAY ANALYSIS IN TEM THAT MEASURES MASS THICKNESS AND COMPOSITION

机译:TEM中X射线分析的简便方法,可测量厚度和组成

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摘要

Quantitative analysis of bulk specimens using energy-dispersive X-ray spectrometry (EDS) in a scanning electron microscope (SEM-EDS) with equivalent accuracy to a full standards analysis can be achieved with only a single measurement on a bulk pure element reference standard [1]. The measurement provides an indirect calibration of beam current and enables quantification without normalisation including a diagnostic analytical total. For analysis of thin specimens in a transmission electron microscope (TEM), X-ray intensity depends not only on beam current and composition, but also on density p and thickness which govern the atoms per unit area in the direction of the electron beam. Therefore, in TEM a diagnostic analytical total cannot be obtained, but if the beam current is known, the mass thickness, ρ,t, and relative elemental compositions can be determined. A bulk reference standard can in principle be used in TEM and Dijkstra et al. [2] attempted to obtain k-ratios from a thin sample and a bulk standard using the same beam current; however, the X-ray yield from the standard was too high at currents suitable for analysis of a thin sample. Boon [3] therefore devised a beam current monitor linear over 3-4 decades so that a bulk target could be measured at much lower current than the specimen and a beam current correction applied. Nevertheless, at TEM voltages (e.g., 200 kV) absorption corrections are severe for a bulk material and this method still requires the use of many standards and a special beam current monitor. Watanabe's zeta factor method [4] avoids any bulk standards and uses thin film standards of known mass thickness and composition, but still requires a method of measuring the beam current. However, beam current measurement is not always available, convenient, or of sufficient accuracy and suitable thin film standards are difficult to obtain. Here we consider a new approach that offers the same convenience as single-standard quantitative analysis in SEM. Instead of a bulk standard, a thin film of known mass thickness that is uniform over a large area is used as a reference. The procedure involves recording an X-ray spectrum from the reference film for each session of acquisitions on real specimens. There is no need to measure the beam current; the current only needs to be stable for the duration of the session. If the mass thickness for one element, (ρ t)_(ref). C_(ref), is known for the reference standard, and the X-ray detector has been characterised so that conversion efficiency is known as a function of energy, then the product of electron dose and detector solid angle can be determined from an X-ray spectrum obtained from the reference standard. Provided the same beam current and kV is used to record a spectrum from the specimen, the mass thickness can be determined and used to make corrections for specimen self-absorption when determining relative elemental concentrations using the Cliff-Lorimer k-factor method. Recording an X-ray spectrum from the reference standard for each session thus replaces explicit measurement of beam current and can be regarded as a "beam measurement". For the reference standard we have used a self-supporting 100 nm thick silicon nitride TEM support film covering a 1 mm x 1 mm aperture within a standard 3 mm diameter disk. To determine the mass thickness for Si, we modelled X-ray emission from bulk Si and thin Si_3N_4 films at 10 kV and 30 kV and used a transmission holder for the standard and a pure bulk Si wafer to measure Si k-ratios and thus obtain (ρt)Si. C_(Si) values at a series of points all over the support film to confirm uniformity over at least the central 0.6 mm region. For testing analysis in the TEM, we have used a JEOL JEM-2200-MCO-FEGTEM and a low background holder, tilted to 7.2°, with a cut-out section to reduce occlusion of the line of sight to the X-ray detector. The reference film was first used to obtain a beam measurement and this was repeated at many stage positions to check for occlusion of the detector by the specimen holder. Without altering microscope conditions, the reference was replaced by a wedge test specimen of Inconel 600 and a series of spectra obtained at different positions along the wedge. Using the new X-ray method, measurements of mass thickness were converted to thickness in nm by assuming a density of 8.43 g/cm~3. The results were in a range of 50 to 80 nm and all agreed with those calculated from the known wedge angle and the annular dark field signal to within experimental error. We also took electron energy loss (EELS) measurements and found thickness estimates to be very dependent on the choice of method for calculation of mean free path. The new X-ray method should allow mass thickness and composition measurements to be obtained conveniently in any TEM instrument with stable beam current, with no need for a beam current meter.
机译:只需对散装纯元素参考标准进行一次测量,就可以在扫描电子显微镜(SEM-EDS)中使用能量分散X射线光谱仪(EDS)对散装样品进行定量分析,其准确度与全标样分析相当。 1]。该测量可对电子束电流进行间接校准,并且无需进行定量分析即可进行定量分析,包括诊断分析总量。为了在透射电子显微镜(TEM)中分析薄样品,X射线强度不仅取决于束流和组成,还取决于控制电子束方向上每单位面积原子的密度p和厚度。因此,在TEM中无法获得诊断分析的总和,但是如果知道电子束电流,则可以确定质量厚度ρ,t和相对元素组成。原则上可以在TEM和Dijkstra等人中使用批量参考标准。 [2]尝试使用相同的束流从薄样品和大体积标准物中获得k比值;但是,在适合分析稀薄样品的电流下,标准品的X射线产率太高。因此,Boon [3]设计了一种在3-4年内保持线性的束电流监测器,以便可以用比样品低得多的电流来测量体积目标,并进行束电流校正。然而,在TEM电压(例如200kV)下,对于块状材料的吸收校正是严格的,并且该方法仍然需要使用许多标准和专用的束电流监测器。渡边的zeta因子方法[4]避免了任何体积标准,并使用了已知质量厚度和成分的薄膜标准,但仍需要一种测量束流的方法。然而,束电流测量并非总是可用,方便或具有足够的精度,并且难以获得合适的薄膜标准。在这里,我们考虑一种新方法,该方法提供与SEM中单标准定量分析相同的便利。代替整体标准,将已知质量厚度的薄膜在大面积上均匀地用作参考。该程序包括在实际标本上的每次采集过程中记录参考胶片的X射线光谱。无需测量电子束电流。当前只需要在会话期间保持稳定即可。如果一个元素的质量厚度为(ρt)_(ref)。 C_(ref)是已知的参考标准,并且X射线检测器的特征在于,转换效率被称为能量的函数,然后可以从X-射线确定电子剂量和检测器立体角的乘积从参考标准获得的射线光谱。假设使用相同的束电流和kV记录样品的光谱,则可以确定质量厚度,并使用Cliff-Lorimer k因子法确定相对元素浓度时,可以使用质量厚度对样品的自吸收进行校正。因此,在每个会话期间记录来自参考标准的X射线光谱将替代对束流的显式测量,并且可以视为“束测量”。对于参考标准,我们使用了自支撑的100 nm厚的氮化硅TEM支撑膜,该膜覆盖了标准3 mm直径圆盘中1 mm x 1 mm的孔。为了确定Si的质量厚度,我们对块状Si和Si_3N_4薄膜在10 kV和30 kV处的X射线发射进行了建模,并使用标准的透射支架和纯块状Si晶片来测量Si k比值,从而得出(ρt)Si。在整个支撑膜上的一系列点处的C_(Si)值至少在中心0.6 mm区域内确认均匀。为了在TEM中进行测试分析,我们使用了JEOL JEM-2200-MCO-FEGTEM和倾斜至7.2°的低背景支架,并带有切口部分,以减少X射线探测器的视线遮挡。首先使用参考膜进行光束测量,并在许多工作台位置重复进行该测试,以检查样品架是否挡住了检测器。在不改变显微镜条件的情况下,用Inconel 600的楔形试样代替参考,并在楔形的不同位置获得一系列光谱。使用新的X射线方法,通过假设密度为8.43 g / cm〜3,将质量厚度的测量值转换为以nm为单位的厚度。结果在50至80 nm的范围内,并且与从已知的楔角和环形暗场信号到实验误差范围内的计算结果一致。我们还进行了电子能量损失(EELS)测量,发现厚度估计值非常依赖于计算平均自由程的方法的选择。新的X射线方法应允许在任何具有稳定束电流的TEM仪器中方便地获得质量厚度和成分测量值,而无需束电流计。

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