首页> 外文会议>13th International Conference on Textures of Materials Pt.2 Aug 26-30, 2002 Seoul, Korea >Effects of Surface-Segregated Sulfur on Primary Texture and Surface-Energy-Induced Selective Grain Growth in Ultra-Thin 3 Silicon-Iron Alloy
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Effects of Surface-Segregated Sulfur on Primary Texture and Surface-Energy-Induced Selective Grain Growth in Ultra-Thin 3 Silicon-Iron Alloy

机译:表面偏硫对超薄3%硅铁合金初生织构和表面能诱导的选择性晶粒长大的影响

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摘要

Correlation between surface-segregated sulfur, nucleation, surface-energy-induced selective growth and final texture is investigated in 40μm thick 3%Si-Fe strips containing 90ppm bulk content of sulfur. At a fixed final reduction, the final texture after direct isothermal annealing is transited from {100} to {110}<001> with increasing flow rate of hydrogen. Such a dependence of final texture on flow rate of hydrogen results from the decrease in concentration of surface-segregated sulfur by the active formation of H_2S, the followed decrease in selective growth time period of {100} grains and the resultant increase in survival probability of {110}<001> grains after the selective growth of {100} grains. At a fixed flow rate of hydrogen, the change in final texture of {110} to {110}<001> with increasing heating rate is due to the lower concentration of segregated sulfur that is favorable for the nucleation of the {110}<001> Goss embryos.
机译:在40μm厚,含硫量为90ppm的3%Si-Fe条带中,研究了表面分离的硫,成核,表面能诱导的选择性生长与最终织构之间的相关性。在固定的最终还原下,随着氢气流速的增加,直接等温退火后的最终织构从{100} 过渡到{110} <001>。最终结构对氢气流速的这种依赖性是由于通过主动形成H_2S减少了表面偏析硫的浓度,随后{100} 晶粒的选择性生长时间的减少以及随之而来的H2S的增加所致。 {100} 晶粒选择性生长后,{110} <001>晶粒的存活概率。在氢气的固定流速下,{110} 到{110} <001>的最终织构随加热速率的增加而变化是由于较低的偏析硫浓度,有利于{110的成核} <001>高斯胚胎。

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