Orientation Change of Epitaxial Pt Films on MgO(001) via Deposition Conditions

摘要

We investigated the orientation change of epitaxial Pt films grown on MgO(001) particularly depending on sputtering conditions. It is found that (001) oriented epitaxial Pt films grow at higher substrate temperatures and lower deposition rates, whereas (111) oriented Pt films grow at lower substrate temperatures and higher deposition rates, indicating that we can synthesize selectively either (001) or (111) oriented ones by properly controlling the deposition conditions. A model explaining the orientation change using the competition between the film surface and the film/substrate interfacial energies during initial stages of film growth is suggested.