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Formation of high electron temperature plasmas in ECH experiments on JT-60U tokamak

机译:JT-60U托卡马克ECH实验中高电子温度等离子体的形成

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Formations of high electron temperature plasmas with ECH/ECCD were studied on the weak and/or reversed shear (R/S) plasmas. EC wave was injected with an oblique toroidal angle for Co-ECCD. A strongly peaked electron temperature profile with T_(e0) more than ~15 keV was observed on the ECE polycrometer in the case of on-axis EC injection just after the plasma current ramp-up. The MSE measurements showed that a strong R/S configuration was produced in the central region during ECH/ECCD. The foot in the steep Te profile corresponded to the q_(min). The maximum electron temperature was limited by a thermal collapse at the central hot region within r/a~0.15. In a preliminary study, the central hot region was slightly expanded by broadening the EC deposition. Meanwhile effective heating was observed on the strong R/S plasmas with the internal transport barrier (ITB), which were already produced by LHCD and/or NB injection during Ip ramp-up. The whole electron temperature inside the ITB increases during ECH/ECCD. An enhancement of the R/S configuration was observed during on-axis ECH/ECCD even though a large central EC driven current was expected by the Fokker Planck prediction. In the LHCD R/S plasma at low density (n_e ~ 0.4x10~(19) m~(-3)), the central electron temperature increased up to Teo ~ 26 keV with keeping the ITB at r/a~0.4. Repeated collapses, which weakened the R/S configuration, were observed during high T_e plasma formation. These ECH/ECCD results indicate the strong correlation of current profile with the formation of high T_e plasma.
机译:在弱和/或反向剪切(R / S)等离子体上研究了用ECH / ECCD形成的高电子温度等离子体。 EC波以倾斜的环形角注入Co-ECCD。在等离子电流上升之后,在同轴EC注入情况下,在ECE多功电子计上观察到T_(e0)大于〜15 keV的强峰值电子温度曲线。 MSE测量表明,在ECH / ECCD期间,在中心区域产生了强大的R / S配置。 Te陡峭轮廓中的脚对应于q_(min)。最大电子温度受到中心热区在r / a〜0.15范围内的热塌陷的限制。在初步研究中,通过扩大EC沉积量略微扩大了中部高温区。同时,在具有内部传输壁垒(ITB)的强R / S等离子体上观察到有效的加热,这已经由LHCD和/或NB注入在Ip加速过程中产生。在ECH / ECCD期间,ITB内部的整个电子温度升高。即使在Fokker Planck预测中预期会有较大的中央EC驱动电流,在轴向ECH / ECCD期间仍观察到R / S配置的增强。在低密度(n_e〜0.4x10〜(19)m〜(-3))的LHCD R / S等离子体中,中心电子温度升高到Teo〜26 keV,而ITB保持在r / a〜0.4。在高T_e等离子体形成过程中,观察到反复崩溃,削弱了R / S构型。这些ECH / ECCD结果表明,电流曲线与高T_e等离子体的形成具有很强的相关性。

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