Er-doped SiO_2 with silicon nanocrystals as a new active optical medium

摘要

Properties of a new active optical medium, Er-doped SiO_2 with silicon nanocrystals, are discussed. We have considered in detail the mechanism of excitation of erbium ions by quantum confined electron-hole pairs in silicon nanocrystals, the diffusion of excitation over the erbium ions inserted into the silicon dioxide matrix and the lifetime of erbium in the excited state limited by de-excitation centers (traps, "black holes") in SiO_2 .