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Multiferroic and Piezoelectric Behavior of Transition-metal Doped ZnO Films

机译:过渡金属掺杂ZnO薄膜的多铁性和压电行为

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摘要

In this paper, we report the multiferroic and piezoelectric behavior observed in transition-metal doped ZnO films. The experimental results indicated that the Co-doped ZnO films deposited by magnetron sputtering possess a Curie temperature higher than 700K, and the magnetic moments of Co are intimatedly correlated to the doping concentration and the substrate. A giant magnetic moment of 6.1 μB/Co is observed in (4 at.%) Co-doped ZnO films. Ferroelectric and ferromagnetic behaviors simultaneously were also obtained in V and Cr doped ZnO films on Pt(111)/Ti/SiO2/Si(100) substrates by reactive sputtering method, revealing a multiferroic nature. The high piezoelectric d33 coefficient 80-120 pm/V has also been achieved by Cr and V substitutions,which could make Cr-doped or V-doped ZnO a promising material in piezoelectric devices.
机译:在本文中,我们报告了在过渡金属掺杂的ZnO薄膜中观察到的多铁性和压电行为。实验结果表明,磁控溅射沉积的Co掺杂的ZnO薄膜的居里温度高于700K,Co的磁矩与掺杂浓度和衬底密切相关。在(4 at。%)Co掺杂的ZnO薄膜中观察到6.1μB/ Co的巨大磁矩。还通过反应溅射法在Pt(111)/ Ti / SiO2 / Si(100)衬底上的V和Cr掺杂的ZnO薄膜中同时获得了铁电和铁磁行为,揭示了多铁性。通过Cr和V替代还可以达到80-120 pm / V的高压电d33系数,这可以使Cr掺杂或V掺杂的ZnO成为压电器件中有希望的材料。

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