Effects of Atmospheric Plasma Surface Treatment on Zinc Tin Oxide Channel Layer for Device Applications

摘要

We report on the effect of atmospheric plasma treatment on the channel of Zinc Tin Oxide transistors. The electrical performance and uniformity of plasma-treated device were improved. The field effect mobility, subthreshold slope and on-off current ratio of the plasma-treated device were enhanced to 10.04 cm~2/Vs, 0.96 V/dec and 1×10~9 respectively, compare with non-treated device (7.76 cm~2/Vs, 1.21 V/dec and 1× 10~9). And, after atmospheric plasma treatment, we could fabricate very uniform ZTO-TFTs with very small variation of the properties among many devices.