Bipolar magnetotransistor sensitivity dependence on temperature

机译：双极型磁晶体管的温度敏感性

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摘要

Bipolar magnetotransistor absolute magnetic sensitivity dependence on temperature in the range 200-370 K and for magnetic fields under 0.18 T was investigated. The possibility of temperature stabilization of sensitivity by input current control was shown.

机译：研究了双极型磁晶体管的绝对磁灵敏度与温度在200-370 K之间以及磁场在0.18 T下的关系。显示了通过输入电流控制使灵敏度温度稳定的可能性。

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《10th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices (EDM 2009)》|2009年|151-153|共3页
会议地点 Novosibirsk(RU);Novosibirsk(RU)
作者
Tikhonov R.D.; Kozlov A.V.; Krasukov A.Yu.; Polomoshnov S.A.; Balashov A.G.;
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SMC MIET Technol. Center, Moscow, Russia;

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bipolar transistors; diffusion; magnetic devices; semiconductor device models; technology CAD (electronics); 2D-simulation; ISE TCAD software; absolute magnetic sensitivity; bipolar magnetotransistor; drift-diffusion model; input current control; temperature 200 K to 370 K; temperature stabilization; temperature dependence of sensitivity;

机译：双极晶体管;扩散;磁性器件;半导体器件模型;技术CAD（电子）; 2D模拟; ISE TCAD软件;绝对磁敏度;双极型磁晶体管;漂移扩散模型;输入电流控制;温度200 K至370 K;温度稳定性;灵敏度的温度依赖性;

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4. Bipolar Magnetotransistor Sensitivity Dependence on Temperature [C] . R. D. Tikhonov, A. V. Kozlov, A. Yu. Krasukov, International Conference and Seminar on Micro/Nanotechnologies and Electron Devices . 2009

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Bipolar magnetotransistor sensitivity dependence on temperature

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