SF_6 Plasma Treated High κ Dielectrics Engineering on InP Metal-Oxide-Semiconductor Field-Effect-Transistors

摘要

The device performance of HfO_2-based InP MOSFETs with or without Al_2O_3 interfacial passivation layer and SF_6 plasma treatment is investigated. With both Al_2O_3 interfacial passivation layer (IPL) and SF_6 plasma treatment, the transconductance, mobility, and drain current are improved by 50%, 56%, 100% respectively compared with those of a single HfO_2 gate oxide layer without SF_6 plasma treatment. Also we have investigated SF_6 plasma treatment in two ways: 1) 4 minutes treatment from the middle of 5 nm HfO_2 oxide, 2) 4 minutes treatment from the top of 5 nm HfO_2 oxide. Results show that treatment in the middle introduces more F into the high κ layer and drive current can be further enhanced by over 20% compared with treatment at the top of gate oxide stack.