Effects of fJuorine incorporation into HfO_2 gate dielectrics on InP and Ln_(0.53)Ga_(0.47)As metal-oxide-semiconductor field-effect-transistors

摘要

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO_2/InP and HfO_2/In_(0.53)Ga_(0.47)As gate stack are presented. F had been introduced into HfO_2 gate dielectric by postgate CF_4 plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO_2 bulk and less interface trap density at the HfO_2/III-V interface.