Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

摘要

In this work, the effects of fluorine u0002Fu0003 incorporation on electrical characteristics of HfO2 /InP andnHfO2 / In0.53Ga0.47As gate stack are presented. F had been introduced into HfO2 gate dielectric bynpostgate CF4 plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysisnand a secondary ion mass spectrometry technique. Compared to the control sample, fluorinatednsamples had great improvements in subthreshold swing, hysteresis, the normalized extrinsicntransconductance, and the normalized drain current. These improvements can be attributed to thenreduction in fixed charge in the HfO2 bulk and less interface trap density at the HfO2 / III–Vninterface.