COMBINED NEAR AND MID INFRARED SENSOR IN A CHIP SCALE PACKAGE

摘要

Described herein is a sensor in chip scale package form factor. For example, a non-vacuum packaged sensor chip described herein includes a substrate, and a sensing element arranged on the substrate. The sensing element is configured to change resistance with temperature. Additionally, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb middle infrared (“MIR”) radiation.