DEFECT DENSITY CALCULATION METHOD, DEFECT-DENSITY CALCULATION PROGRAM, DEFECT-DENSITY CALCULATION APPARATUS, HEAT TREATMENT CONTROL SYSTEM AND MACHINING CONTROL SYSTEM

摘要

A defect density calculation method according to one embodiment of the present disclosure is a method of calculating a temporal change of the defect density distribution in a semiconductor layer. The method includes calculating the temporal change of the defect density distribution on the basis of an arithmetic function using at least the activation energy of a detect included in the semiconductor layer, the processing temperature of the semiconductor layer, and the processing time of the semiconductor layer as arguments.