Manufacturing method of back-illuminated CMOS sensor, manufacturing method of electronic impact CMOS sensor, pixel for back-illuminated CMOS sensor, and electronic impact CMOS sensor

摘要

PROBLEM TO BE SOLVED: To provide a back-illuminated CMOS sensor and a method for manufacturing an electronic impact CMOS sensor capable of suppressing an increase in deviation and variation in characteristics of an analog circuit formed on a surface. SOLUTION: This is a method for manufacturing a back-illuminated CMOS sensor, in which a forming step of forming an N-shaped light receiving portion 50 inside a silicon substrate 305 and an ion forming a P + diffusion layer 270 on the back surface of the silicon substrate 305 are formed. It includes an injection step of injecting and an irradiation step of irradiating a laser from the back surface to activate the injected ions. The laser is irradiated excluding the region on the front surface of the back-illuminated CMOS sensor where an analog circuit such as an AD converter connected to a pixel is formed. [Selection diagram] FIG. 4