Back-illuminated voltage-domain global shutter CMOS image sensor with 3.75µm pixels and dual in-pixel storage nodes

摘要

A 1024×800 image sensor with voltage-domain global shutter pixels and dual in-pixel storage is implemented in a 90nm/65nm back-illuminated (BSI) imaging process. The pixel has a 3.75μm pitch, achieves -80dB PLS operating in its correlated double sampling mode and has a maximum dynamic range in its high-dynamic range imaging mode of 102dB.