TANDEM PHOTOVOLTAIC DEVICE COMBINING A SILICON-BASED SUB-CELL AND A PEROVSKITE-BASED SUB-CELL COMPRISING A P- OR N-TYPE MATERIAL/PEROVSKITE COMPOSITE LAYER

摘要

The present invention relates to a tandem photovoltaic device that comprises, in the following order of superposition: A/a silicon-based a sub-cell A, in particular having a silicon heterojunction or TOPCon architecture; and B/a perovskite-based sub-cell B, comprising at least: -an N-type conductive or semi-conductive layer in the instance of a NIP structure, or P-type in the instance of a PIN structure; and -a composite layer, superposed on said lower conductive or semi-conductive layer, comprising at least one perovskite material and at least one P-type material in the instance of a NIP structure or N-type material in the instance of a PIN structure, and having a gradient of the mass ratio of perovskite material/P material in the instance of a NIP structure or perovskite material/N material in the instance of a PIN structure that decreases in the direction of the interface between said composite layer and said lower conductive or semi-conductive layer towards the opposite face of said composite layer, wherein the perovskite-based sub-cell B has a planar structure.