Quality evaluation method for crystal defects of single crystal silicon block, quality evaluation program for single crystal silicon block, manufacturing method for single crystal silicon block and manufacturing method for silicon wafer

摘要

PROBLEM TO BE SOLVED: To evaluate a quality of a single crystal silicon block, a quality evaluation program of a single crystal silicon block, a method of manufacturing a single crystal silicon block, which can evaluate the quality of crystal defects of the single crystal silicon block with higher accuracy than before. We propose a method for manufacturing silicon wafers. SOLUTION: This is a method for evaluating the quality of a single crystal silicon block obtained by cutting a single crystal silicon ingot grown by the Czochralski method, and has a record of crystal pulling speed at the time of growing a single crystal silicon ingot. It corresponds to the first step of acquiring the value, the second step of measuring the oxygen concentration of the single crystal silicon block along the crystal pulling direction, and the position where the oxygen concentration was measured based on the measured oxygen concentration. It is characterized by including a third step of correcting the crystal pulling speed and a fourth step of evaluating the quality of the crystal defect of the single crystal silicon block based on the corrected crystal pulling speed. [Selection diagram] Fig. 2